金刚石多线切割工艺对高纯4H-SiC晶片翘曲度的影响
摘 要：描述了高纯SiC晶体材料的加工方法，分析了金刚石多线各种切割工艺对高纯SiC晶体的切割效果及效率的影响，并基于金刚石切割SiC晶体的理论依据，结合各种工艺试验数据及切割片数据，总结出相对稳定的工艺条件，并在这类工艺条件下，得出较低翘曲度的高纯SiC晶片，满足下游客户的要求，采用TROPEL FM-100平坦度测试仪分析各种切割工艺条件下的高纯100 mm 4H-SiC切割片表面形貌。
关键词：金刚石线；高纯4H-SiC晶片；翘曲度
中图分类号：TG48 文献标识码：A
文章编码：1672-7053(2017)07-0126-02
Abstract：In this paper, the processing method of high purity SiC crystal material is described. The effect of diamond cutting process on the slicing efficiency and efficiency of high purity SiC crystal is analyzed. Based on the theoretical basis of diamond slicing SiC crystal, Test data and slicing wafers data, summed up the relatively stable process conditions, and in this type of process conditions, the lower Warp of the high-purity SiC wafer can be meet the requirements of customers. The surface morphology of high purity 100 mm 4H-SiC dicing pieces under various slicing conditions was analyzed by TROPEL FM-100 flatness tester.
Key Words：Diamond wire; High purity 4H-SiC wafer; Warp
